VS-48CTQ060PbF, VS-48CTQ060-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common Low forward voltage drop cathode High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long Anode 2 Anode term reliability 13Common 150 C T operation cathode J TO-220AB High frequency operation Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition I 2 x 20 A F(AV) (-N3 only) V 60 V R DESCRIPTION V at I 0.58 V F F This center tap Schottky rectifier has been optimized for low I max. 89 mA at 125 C RM reverse leakage at high temperature. The proprietary barrier T max. 150 C J technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching Diode variation Common cathode power supplies, converters, freewheeling diodes, and E 13 mJ AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 60 V RRM I t = 5 s sine 1000 A FSM p V 20 A , T = 125 C (per leg) 0.58 V F pk J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-48CTQ060PbFVS-48CTQ060-N3UNITS Maximum DC reverse voltage V R 60 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 20 forward current I 50 % duty cycle at T = 111 C, rectangular waveform F(AV) C per device 40 See fig. 5 A Maximum peak one cycle non-repetitive Following any rated 5 s sine or 3 s rect. pulse 1000 surge current per leg I load condition and with FSM 10 ms sine or 6 ms rect. pulse 260 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.50 A, L = 11.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 29-Aug-11 Document Number: 94229 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-48CTQ060PbF, VS-48CTQ060-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.61 T = 25 C J 40 A 0.83 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.58 T = 125 C J 40 A 0.75 T = 25 C 2 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 89 J Threshold voltage V 0.37 V F(TO) T = T maximum J J Forward slope resistance r 8.26 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1220 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, 2.0 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.0 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-220AB 48CTQ060 Revision: 29-Aug-11 Document Number: 94229 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000