VS-40CTQ150PbF, VS-40CTQ150-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common 175 C T operation J cathode Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance 13Common TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition I 2 x 20 A (-N3 only) F(AV) V 150 V R DESCRIPTION V at I 0.71 V F F The VS-40CTQ... center tap Schottky rectifier has been I max. 15 mA at 125 C RM optimized for very low forward voltage drop, with moderate T max. 175 C J leakage. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical Diode variation Common cathode applications are in switching power supplies, converters, E 1.0 mJ AS freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 150 V RRM I t = 5 s sine 1500 A FSM p V 20 A , T = 125 C (per leg) 0.71 V F pk J T - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-40CTQ150PbFVS-40CTQ150-N3UNITS Maximum DC reverse voltage V R 150 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 20 forward current I 50 % duty cycle at T = 140 C, rectangular waveform F(AV) C per device 40 See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 1500 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 250 RRM See fig. 7 Non-repetitive avalanche energy per leg E T = 25 C, I = 1.5 A, L = 0.9 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 26-Aug-11 Document Number: 94214 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40CTQ150PbF, VS-40CTQ150-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.93 T = 25 C J 40 A 1.16 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.71 T = 125 C J 40 A 0.85 T = 25 C 50 A Maximum reverse leakage current per leg J (1) I V = Rated V RM R R See fig. 2 T = 125 C 15 mA J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 450 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation 1.5 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.75 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-220AB 40CTQ150 Revision: 26-Aug-11 Document Number: 94214 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000