VS-40CTQ150SPbF, VS-40CTQ150-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES AEC-Q101 qualified Very low forward voltage drop Halogen-free according to IEC 61249-2-21 definition 2 D PAK TO-262 175 C T operation Base Base J common common Center tap TO-220 package cathode cathode 2 2 High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term 2 2 reliability 1 1 3 3 Common Common Anode cathode Anode Anode Anode cathode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C VS-40CTQ150SPbFVS-40CTQ150-1PbF Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY DESCRIPTION 2 Package TO-262AA, TO-263AB (D PAK) The VS-40CTQ... center tap Schottky rectifier has been I 2 x 20 A F(AV) optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for V 150 V R reliable operation up to 175 C junction temperature. Typical V at I 0.71 V F F applications are in switching power supplies, converters, I 15 mA at 125 C RM freewheeling diodes, and reverse battery protection. T max. 175 C J Diode variation Common cathode E 1 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 150 V RRM I t = 5 s sine 1500 A FSM p V 20 Apk, T = 125 C (per leg) 0.71 V F J T - 55 to 175 C J VOLTAGE RATINGS VS-40CTQ150SPbF PARAMETER SYMBOL UNITS VS-40CTQ150-1PbF Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM Document Number: 94215 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-40CTQ150SPbF, VS-40CTQ150-1PbF Schottky Rectifier, 2 x 20 A Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 20 forward current I 50 % duty cycle at T = 140 C, rectangular waveform F(AV) C per device 40 See fig. 5 A Maximum peak one cycle non-repetitive Following any rated load 5 s sine or 3 s rect. pulse 1500 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 250 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.5 A, L = 0.9 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.93 T = 25 C J 40 A 1.16 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.71 T = 125 C J 40 A 0.85 T = 25 C 50 A J Maximum reverse leakage current per leg (1) I V = Rated V RM R R See fig. 2 T = 125 C 15 mA J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 450 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation 1.5 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.75 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 2 Case style D PAK 40CTQ150S Marking device Case style TO-262 40CTQ150-1 www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94215 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 04-Jan-11