VS-43CTQ100PbF, VS-43CTQ100-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common 175 C T operation J cathode Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Anode 2 Anode High frequency operation 13Common TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition I 2 x 20 A F(AV) (-N3 only) V 100 V R DESCRIPTION V at I 0.67 V F F This center tap Schottky rectifier series has been optimized I max. 11 mA at 125 C RM for low reverse leakage at high temperature. The proprietary T 175 C J barrier technology allows for reliable operation up to 175 C Diode variation Common cathode junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and E 7.50 mJ AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 100 V RRM I t = 5 s sine 850 A FSM p V 20 A , T = 125 C (per leg) 0.67 V F pk J T Range - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-43CTQ100PbFVS-43CTQ100-N3UNITS Maximum DC reverse voltage V R 100 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 20 forward current I 50 % duty cycle at T = 135 C, rectangular waveform F(AV) C per device 40 See fig. 5 A Following any rated Maximum peak one cycle 5 s sine or 3 s rect. pulse 850 load condition and non-repetitive surge current per leg I FSM with rated V RRM 10 ms sine or 6 ms rect. pulse 275 See fig. 7 applied Non-repetitive avalanche energy per leg E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 11-Oct-11 Document Number: 94223 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-43CTQ100PbF, VS-43CTQ100-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.81 T = 25 C J 40 A 0.98 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.67 T = 125 C J 40 A 0.81 T = 25 C 1 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 11 J Threshold voltage V 0.71 V F(TO) T = T maximum J J Forward slope resistance r 0.43 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1480 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, 2.0 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.0 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-220AB 43CTQ100 Revision: 11-Oct-11 Document Number: 94223 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000