VS-50WQ10FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 5.5 A FEATURES Base cathode Low forward voltage drop 4, 2 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline 1 3 Small foot print, surface mountable Anode Anode D-PAK (TO-252AA) High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of PRODUCT SUMMARY 260 C Package D-PAK (TO-252AA) Material categorization: for definitions of compliance I 5.5 A F(AV) please see www.vishay.com/doc 99912 100 V V R DESCRIPTION V at I See Electrical table F F The VS-50WQ10FN-M3 surface mount Schottky rectifier I 4 mA at 125 C RM has been designed for applications requiring low forward T max. 150 C J drop and small foot prints on PC board. Typical applications Diode variation Single die are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery E 6 mJ AS protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 5.5 A F(AV) V 100 V RRM I t = 5 s sine 330 A FSM p V 5 A , T = 125 C 0.63 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-50WQ10FN-M3 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 135 C, rectangular waveform 5.5 F(AV) C See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 330 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 110 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 40 mH 6.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93314 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-50WQ10FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 5 A 0.77 T = 25 C J 10 A 0.91 Maximum forward voltage drop (1) V V FM See fig. 1 5 A 0.63 T = 125 C J 10 A 0.74 T = 25 C 1 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 4 J Threshold voltage V 0.47 V F(TO) T =T maximum J J Forward slope resistance r 21.46 m t Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 183 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.0 C/W thJC junction to case See fig. 4 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 50WQ10FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93314 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000