VS-60CPQ150PbF, VS-60CPQ150-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base common 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 2 Guard ring for enhanced ruggedness and long 1 13 Available term reliability Anode Anode TO-247AC 2 1 2 Designed and qualified according to JEDEC-JESD47 Common cathode Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION Package TO-247AC The VS-60CPQ150... center tap Schottky rectifier series has I 2 x 30 A F(AV) been optimized for low reverse leakage at high temperature. V 150 V R The proprietary barrier technology allows for reliable V at I 0.67 V F F operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, I max. 25 mA at 125 C RM freewheeling diodes, and reverse battery protection. T max. 175 C J Diode variation Common cathode E 0.5 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 60 A F(AV) V 150 V RRM I t = 5 s sine 2300 A FSM p V 30 A , T = 125 C (per leg) 0.67 V F pk J T Range - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-60CPQ150PbFVS-60CPQ150-N3UNITS Maximum DC reverse voltage V R 150 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 30 forward current I 50 % duty cycle at T = 151 C, rectangular waveform F(AV) C per device 60 See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 2300 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 510 RRM See fig. 7 Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 1 mH 0.5 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Jul-13 Document Number: 94238 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60CPQ150PbF, VS-60CPQ150-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 30 A 0.80 0.83 T = 25 C J 60 A 0.93 0.99 Maximum forward voltage drop per leg (1) V V FM See fig. 1 30 A 0.64 0.67 T = 125 C J 60 A 0.74 0.77 T = 25 C 10 100 A Maximum reverse leakage current per leg J I V = Rated V RM R R See fig. 2 T = 125 C 12 25 mA J Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 820 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body -7.5 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation 0.8 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.4 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-247AC (JEDEC) 60CPQ150 Revision: 17-Jul-13 Document Number: 94238 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000