VS-40CTQ045PbF, VS-40CTQ045-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
Base
2
common
150 C T operation
J
cathode
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
Anode 2 Anode
and moisture resistance
13Common
TO-220AB
cathode
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Designed and qualified according to JEDEC-JESD47
Package TO-220AB
Halogen-free according to IEC 61249-2-21 definition
I 2 x 20 A (-N3 only)
F(AV)
V 45 V
R
DESCRIPTION
V at I 0.48 V
F F
This center tap Schottky rectifier has been optimized for
I max. 115 mA at 125 C
RM
very low forward voltage drop, with moderate leakage. The
T max. 150 C
J proprietary barrier technology allows for reliable operation
up to 150 C junction temperature. Typical applications are
Diode variation Common cathode
in switching power supplies, converters, freewheeling
E 20 mJ
AS
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 40 A
F(AV)
V 45 V
RRM
I t = 5 s sine 1240 A
FSM p
V 20 A , T = 125 C (per leg) 0.48 V
F pk J
T Range - 55 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOLVS-40CTQ045PbFVS-40CTQ045-N3UNITS
Maximum DC reverse voltage V
R
45 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
per leg 20
Maximum average forward current
I 50 % duty cycle at T = 116 C, rectangular waveform
F(AV) C
See fig. 5
per device 40
A
Maximum peak one cycle non-repetitive
5 s sine or 3 s rect. pulse Following any rated load 1240
surge current per leg I condition and with rated
FSM
V applied
10 ms sine or 6 ms rect. pulse 350
See fig. 7 RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 3 A, L = 4.4 mH 20 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 3A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 26-Aug-11 Document Number: 94212
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ045PbF, VS-40CTQ045-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A 0.53
T = 25 C
J
40 A 0.68
Maximum forward voltage drop per leg
(1)
V V
FM
See fig. 1
20 A 0.48
T = 125 C
J
40 A 0.67
T = 25 C 3
Maximum reverse leakage current per leg J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 115
J
Threshold voltage V 0.27 V
F(TO)
T = T maximum
J J
Forward slope resistance r 8.72 m
t
Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 2800 pF
T R DC
Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
T , T - 55 to 150 C
J Stg
temperature range
Maximum thermal resistance,
2.0
junction to case per leg
R DC operation
thJC
Maximum thermal resistance,
1.0 C/W
junction to case per package
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
Marking device Case style TO-220AB 40CTQ045
Revision: 26-Aug-11 Document Number: 94212
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000