SUP40N25-60 Vishay Siliconix N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V (V) R ()I (A) Q (Typ) DS DS(on) D g 175 C Junction Temperature RoHS 0.060 at V = 10 V COMPLIANT 40 GS New Low Thermal Resistance Package 250 95 0.064 at V = 6 V 38.7 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G GD S S Top View N-Channel MOSFET Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit V Drain-Source Voltage 250 DS V V Gate-Source Voltage 30 GS T = 25 C 40 C Continuous Drain Current (T = 175 C) I J D T = 125 C 23 C A Pulsed Drain Current I 70 DM I Avalanche Current 35 AR a L = 0.1 mH E 61 mJ Repetitive Avalanche Energy AR b T = 25 C C 300 a P W Maximum Power Dissipation D c T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 0.5 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). Document Number: 73132 www.vishay.com S11-2130 Rev. B, 31-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP40N25-60 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Typ. Parameter Symbol Test Conditions Min . Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 250 DS DS D V V V = V , I = 250 A Gate Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 30 V Gate-Body Leakage 250 nA GSS DS GS V = 250 V, V = 0 V 1 DS GS I V = 250 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 250 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 70 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.049 0.060 GS D V = 10 V, I = 20 A, T = 125 C 0.121 GS D J a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 20 A, T = 175 C 0.163 GS D J V = 6 V, I = 15 A 0.051 0.064 GS D a g V = 15 V, I = 20 A 70 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5000 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 300 pF oss GS DS C Reverse Transfer Capacitance 170 rss c Q 95 140 Total Gate Charge g c Q V = 125 V, V = 10 V, I = 45 A Gate-Source Charge 28 nC gs DS GS D c Q 34 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 1.6 g c t 22 35 Turn-On Delay Time d(on) c t Rise Time V = 100 V, R = 2.78 220 330 r DD L ns c I 45 A, V = 10 V, R = 2.5 t D GEN g 40 60 Turn-Off Delay Time d(off) c t Fall Time 145 220 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C I Continuous Current 45 S A I Pulsed Current 70 SM a V I = 45 A, V = 0 V 11.5 V Forward Voltage SD F GS Reverse Recovery Time t 150 225 ns rr I I = 45 A, di/dt = 100 A/s Peak Reverse Recovery Current 12 18 A RM(REC) F Reverse Recovery Charge Q 0.9 2 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73132 2 S11-2130 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000