VS-40CTQ045PbF, VS-40CTQ045-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common 150 C T operation J cathode Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance 13Common TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition I 2 x 20 A (-N3 only) F(AV) V 45 V R DESCRIPTION V at I 0.48 V F F This center tap Schottky rectifier has been optimized for I max. 115 mA at 125 C RM very low forward voltage drop, with moderate leakage. The T max. 150 C J proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are Diode variation Common cathode in switching power supplies, converters, freewheeling E 20 mJ AS diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 45 V RRM I t = 5 s sine 1240 A FSM p V 20 A , T = 125 C (per leg) 0.48 V F pk J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-40CTQ045PbFVS-40CTQ045-N3UNITS Maximum DC reverse voltage V R 45 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 20 Maximum average forward current I 50 % duty cycle at T = 116 C, rectangular waveform F(AV) C See fig. 5 per device 40 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 1240 surge current per leg I condition and with rated FSM V applied 10 ms sine or 6 ms rect. pulse 350 See fig. 7 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 3 A, L = 4.4 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 26-Aug-11 Document Number: 94212 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40CTQ045PbF, VS-40CTQ045-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.53 T = 25 C J 40 A 0.68 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.48 T = 125 C J 40 A 0.67 T = 25 C 3 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 115 J Threshold voltage V 0.27 V F(TO) T = T maximum J J Forward slope resistance r 8.72 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 2800 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, 2.0 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.0 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-220AB 40CTQ045 Revision: 26-Aug-11 Document Number: 94212 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000