X-On Electronics has gained recognition as a prominent supplier of VS-16TTS08STRLPBF SCRs across the USA, India, Europe, Australia, and various other global locations. VS-16TTS08STRLPBF SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-16TTS08STRLPBF Vishay

VS-16TTS08STRLPBF electronic component of Vishay
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Part No.VS-16TTS08STRLPBF
Manufacturer: Vishay
Category: SCRs
Description: SCRs RECOMMENDED ALT 78-VS-16TTS08STRL-M3
Datasheet: VS-16TTS08STRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
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MOQ : 800
Multiples : 1
800 : USD 0
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 2.6958
10 : USD 2.2315
100 : USD 1.8434
250 : USD 1.781
500 : USD 1.6008
800 : USD 1.4609
2400 : USD 1.4609
4800 : USD 1.4497
9600 : USD 1.4047
N/A

Obsolete
0
MOQ : 800
Multiples : 800
800 : USD 2.9556
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 3.904
10 : USD 3.904
25 : USD 3.904
N/A

Obsolete
   
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We are delighted to provide the VS-16TTS08STRLPBF from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-16TTS08STRLPBF and other electronic components in the SCRs category and beyond.

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VS-16TTS..SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A FEATURES 2, 4 4 Anode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Designed and qualified according JEDEC -JESD 47 2 Material categorization: 3 for definitions of compliance please see 1 3 1 Cathode www.vishay.com/doc 99912 Gate 2 TO-263AB (D PAK) APPLICATIONS Input rectification (soft start) PRODUCT SUMMARY Vishay input diodes, switches and output rectifiers which 2 Package TO-263AB (D PAK) are available in identical package outlines Diode variation Single SCR DESCRIPTION I 10 A T(AV) V /V 800 V, 1200 V The VS-16TTS..SPbF high voltage series of silicon DRM RRM controlled rectifiers are specifically designed for medium V 1.4 V TM power switching and phase control applications. The glass I 60 mA GT passivation technology used has reliable operation up to T -40 C to +125 C J 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G-10 glass fabric-based epoxy 2.5 3.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 6.3 9.5 thCA Aluminum IMS with heatsink, R = 5 C/W 14.0 18.5 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 T(AV) A I 16 RMS V /V 800/1200 V RRM DRM I 200 A TSM V 10 A, T = 25 C 1.4 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-16TTS08SPbF 800 800 10 VS-16TTS12SPbF 1200 1200 Revision: 08-Jul-15 Document Number: 94589 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-16TTS..SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 98 C, 180 conduction, half sine wave 10 T(AV) C Maximum RMS on-state current I 16 RMS A 10 ms sine pulse, rated V applied 170 Maximum peak, one-cycle, RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated V applied 144 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 200 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 2000 A s Maximum on-state voltage drop V 10 A, T = 25 C 1.4 V TM J On-state slope resistance r 24.0 m t T = 125 C J Threshold voltage V 1.1 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J mA Anode supply = 6 V, resistive load, initial I = 1 A, T Holding current I - 150 H T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load,T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max. linear to 80 % V = R - k = Open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 90 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 60 mA GT J Anode supply = 6 V, resistive load, T = 125 C 35 J Anode supply = 6 V, resistive load, T = - 10 C 3.0 J Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 08-Jul-15 Document Number: 94589 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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