VS-18TQ035-M3, VS-18TQ040-M3, VS-18TQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 18 A FEATURES Base 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical 1 3 strength and moisture resistance Cathode Anode 2L TO-220AC Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 18 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R V at I 0.53 V F F DESCRIPTION I max. 25 mA at 125 C RM The VS-18TQ... Schottky rectifier series has been optimized T max. 175 C J for low reverse leakage at high temperature. The proprietary E 24 mJ AS barrier technology allows for reliable operation up to 175 C Package 2L TO-220AC junction temperature. Typical applications are in switching Circuit configuration Single power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 18 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 1800 A FSM p V 18 A , T = 125 C 0.53 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-18TQ035-M3 VS-18TQ040-M3 VS-18TQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current, I 50 % duty cycle at T = 149 C, rectangular waveform 18 F(AV) C see fig. 5 A Following any rated load 5 s sine or 3 s rect. pulse 1800 Maximum peak one cycle I condition and with rated FSM non-repetitive surge current, see fig. 7 10 ms sine or 6 ms rect. pulse 390 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 3.6 A, L = 3.7 mH 24 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3.6 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-Nov-17 Document Number: 96262 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-18TQ035-M3, VS-18TQ040-M3, VS-18TQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 18 A 0.60 T = 25 C J 36 A 0.72 Maximum forward voltage drop (1) V V FM See fig. 1 18 A 0.53 T = 125 C J 36 A 0.67 T = 25 C 2.5 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 25 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1400 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, DC operation R 1.50 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 18TQ035 Marking device Case style 2L TO-220AC 18TQ040 18TQ045 Revision: 23-Nov-17 Document Number: 96262 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000