VS-18TQ035SHM3, VS-18TQ040SHM3, VS-18TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 18 A FEATURES Base 175 C T operation J cathode Low forward voltage drop 2 High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength 2 and moisture resistance 3 1 3 Guard ring for enhanced ruggedness and long term 1 N/C Anode 2 reliability D PAK (TO-263AB) Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified PRIMARY CHARACTERISTICS Meets JESD 201 class 1 whisker test I 18 A F(AV) Material categorization: for definitions of compliance V 35 V, 40 V, 45 V R please see www.vishay.com/doc 99912 V at I 0.53 V F F I 25 mA at 125 C RM DESCRIPTION T max. 175 C J The VS-18TQ... Schottky rectifier series has been optimized E 24 mJ AS for low reverse leakage at high temperature. The proprietary 2 Package D PAK (TO-263AB) barrier technology allows for reliable operation up to 175 C Circuit configuration Single junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 18 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 1800 A FSM p V 18 A , T = 125 C 0.53 V F pk J T Range -55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-18TQ035SHM3 VS-18TQ040SHM3 VS-18TQ045SHM3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 149 C, rectangular waveform 18 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 1800 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 390 See fig. 7 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 3.6 A, L = 3.7 mH 24 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3.6 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 04-Aug-17 Document Number: 96125 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-18TQ035SHM3, VS-18TQ040SHM3, VS-18TQ045SHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 18 A 0.60 T = 25 C J 36 A 0.72 Maximum forward voltage drop (1) V V FM See fig. 1 18 A 0.53 T = 125 C J 36 A 0.67 T = 25 C 2.5 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 25 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1400 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and T , T -55 to 175 C J Stg storage temperature range Maximum thermal resistance, DC operation R 1.50 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque maximum 12 (10) (lbf in) 18TQ035SH 2 Marking device Case style D PAK (TO-263AB) 18TQ040SH 18TQ045SH Revision: 04-Aug-17 Document Number: 96125 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000