VS-19TQ015-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 19 A FEATURES 125 C T operation (V < 5 V) J R Base cathode 2 Optimized for OR-ing applications 2 Ultralow forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term 1 reliability 1 3 3 Anode Cathode High purity, high temperature epoxy encapsulation for 2L TO-220AC enhanced mechanical strength and moisture resistance Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 19 A F(AV) V 15 V DESCRIPTION R V at I 0.32 V F F The VS-19TQ015... Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of I max. 522 mA at 100 C RM parallel power supplies. The proprietary barrier technology T max. 125 C J allows for reliable operation up to 125 C junction E 6.75 mJ AS temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and Package 2L TO-220AC redundant power subsystems. Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 19 A F(AV) V 15 V RRM I t = 5 s sine 700 A FSM p V 19 A , T = 75 C 0.32 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-19TQ015-M3 UNITS Maximum DC reverse voltage V R 15 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 80 C, rectangular waveform 19 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 700 non-repetitive surge current I condition and with rated FSM See fig. 7 V applied 10 ms sine or 6 ms rect. pulse 330 RRM Non-repetitive avalanche energy E T = 25 C, I = 1.50 A, L = 6 mH 6.75 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.50 A AR Frequency limited by T maximum V = 3 x V typical J A R Revision: 11-Oct-17 Document Number: 94151 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-19TQ015-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 19 A 0.36 T = 25 C J 38 A 0.46 Maximum forward voltage drop (1) V V FM See fig. 1 19 A 0.32 T = 75 C J 38 A 0.43 T = 100 C, V = 12 V 465 J R T = 100 C, V = 5 V 285 Maximum reverse leakage current J R (1) I mA RM See fig. 2 T = 25 C 10.5 J V = Rated V R R T = 100 C 522 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 2000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -55 to 125 J C Maximum storage temperature range T -55 to 150 Stg Maximum thermal resistance, DC operation R 1.50 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style 2L TO-220AC 19TQ015 Revision: 11-Oct-17 Document Number: 94151 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000