VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES Small foot print, surface mountable Low forward voltage drop High frequency operation Cathode Anode Guard ring for enhanced ruggedness and long term reliability SMA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Designed and qualified for industrial level PRODUCT SUMMARY Material categorization: for definitions of compliance Package SMA please see www.vishay.com/doc 99912 I 2.1 A F(AV) V 100 V DESCRIPTION R V at I 0.78 V F F The VS-10MQ100NPbF surface mount Schottky rectifier I 1 mA at 125 C RM has been designed for applications requiring low forward T max. 150 C drop and very small foot prints on PC boards. Typical J applications are in disk drives, switching power supplies, Diode variation Single die converters, freewheeling diodes, battery charging, and E 1.0 mJ AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I DC 2.1 A F(AV) V 100 V RRM I t = 5 s sine 120 A FSM p V 1.5 A , T = 125 C 0.68 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10MQ100NPbF UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 50 % duty cycle at T = 126 C, rectangular waveform L Maximum average forward current 2 I On PC board 9 mm island 2.1 A F(AV) See fig. 4 (0.013 mm thick copper pad area) 5 s sine or 3 s rect. pulse 120 Maximum peak one cycle Following any rated non-repetitive surge current, T = 25 C I load condition and with A J FSM See fig. 6 10 ms sine or 6 ms rect. pulse rated V applied 30 RRM Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 8 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 20-May-14 Document Number: 94119 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10MQ100NPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1 A 0.78 T = 25 C J 1.5 A 0.85 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.63 T = 125 C J 1.5 A 0.68 T = 25 C 0.1 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 1 J Threshold voltage V 0.52 V F(TO) T = T maximum J J Forward slope resistance r 78.4 m t Typical junction capacitance C V = 10 V , T = 25 C, test signal = 1 MHz 38 pF T R DC J Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 80 C/W thJA junction to ambient 0.07 g Approximate weight 0.002 oz. Marking device Case style SMA (similar D-64) V1J Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA 10 1 T = 150 C J T = 125 C J 0.1 T = 100 C J T = 150 C 0.01 J T = 125 C J T = 75 C J 1 T = 25 C J 0.001 T = 50 C J 0.0001 T = 25 C J 0.1 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Revision: 20-May-14 Document Number: 94119 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (mA) R