Features
RoHS compliant*
For use in low voltage high frequency
inverters, free wheeling and polarity protec-
Reverse voltage from 20 to 60 V
tion applications
Forward current of 2 A
High current capability
CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 2 A with a
choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ T = 25 C Unless Otherwise Noted)
A
CD214B-
Parameter Symbol Unit
B220 B230 B240 B250 B260
Forward Voltage (Max.)
V 0.5 0.5 0.5 0.7 0.7 V
F
(I = 2 A)
f
Typical Junction
C 200 pF
T
Capacitance*
Reverse Current (Max.)
I 0.5 0.5 0.5 0.5 0.5 mA
R
(at Rated V )
R
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ T = 25 C Unless Otherwise Noted)
A
CD214B-
Parameter Symbol Unit
B220 B230 B240 B250 B260
Repetitive Peak
V 20 30 40 50 60 V
RRM
Reverse Voltage
Reverse Voltage V 20 30 40 50 60 V
R
Maximum RMS Voltage V 14 21 28 35 42 V
RMS
Avg. Forward Current I 2 A
O
Forward Current,
Surge Peak I 50 50 50 50 50 A
surge
(60 Hz, 1 cycle)
Typical Thermal
R 15 15 15 15 15 C/W
JL
Resistance**
Storage Temperature T -55 to +150 C
STG
Junction Temperature T -55 to +125 C
J
** Thermal resistance junction to lead.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Speci cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their speci c applications.
*RoHS COMPLIANTCD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Product Dimensions Recommended Pad Layout
A
A
B
B C
MM
DIMENSIONS:
(INCHES)
C
G
Dimension SMA (DO-214AC)
2.90
A
(0.114)
H F D
3.00
B
E
(0.118)
2.30
C
(0.091)
Dimension SMB (DO-214AA)
4.06 - 4.57
A Physical Specifications
(0.160 - 0.180)
3.30 - 3.94
B
Case ............................................................................ Molded plastic
(0.130 - 0.155)
Polarity .................................................... Indicated by cathode band
1.96 - 2.21
C
Weight ................................................... 0.003 ounces / 0.093 grams
(0.078 - 0.087)
0.15 - 0.31
D
(0.006 - 0.112)
Typical Part Marking
5.21 - 5.59
E
(0.205 - 0.220)
CD214B-B220 ...................................................................... 220
0.05 - 0.20
CD214B-B230 ...................................................................... 230
F
(0.002 - 0.008)
CD214B-B240 ...................................................................... 240
2.01 - 2.62
G
CD214B-B250 ...................................................................... 250
(0.080 - 0.103)
0.76 - 1.52 CD214B-B260 ...................................................................... 260
H
(0.030 - 0.060)
How To Order
MM
CD 214B - B 2 30 LF
DIMENSIONS:
(INCHES)
Common Code
Chip Diode
Package
214B = SMB/DO-214AA
Model
B = Schottky Barrier Series
Average Forward Current (I ) Code
o
2 = 2 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (V ) Code
R
20 = 20 V
30 = 30 V
40 = 40 V
50 = 50 V
60 = 60 V
Terminations
LF = 100 % Sn (RoHS Compliant)
Speci cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their speci c applications.