VS-10BQ060PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES Small foot print, surface mountable Low forward voltage drop Cathode Anode High frequency operation Guard ring for enhanced ruggedness and long term reliability SMB Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Designed and qualified for industrial level PRODUCT SUMMARY Material categorization: for definitions of compliance Package SMB please see www.vishay.com/doc 99912 I 1.0 A F(AV) V 60 V DESCRIPTION R V at I 0.6 V The VS-10BQ060PbF surface mount Schottky rectifier has F F been designed for applications requiring low forward drop I 5.0 mA at 125 C RM and very small foot prints on PC boards. Typical T max. 150 C J applications are in disk drives, switching power supplies, Diode variation Single die converters, freewheeling diodes, battery charging, and reverse battery protection. E 2.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 60 V RRM I t = 5 s sine 700 A FSM p V 1.0 A , T = 125 C 0.57 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10BQ060PbF UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 103 C, rectangular waveform 1.0 A F(AV) L 5 s sine or 3 s rect. pulse Following any rated 700 Maximum peak one cycle I load condition and with A FSM non-repetitive surge current rated V applied 10 ms sine or 6 ms rect. pulse 42 RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 4 mH 2.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 03-Jun-14 Document Number: 94113 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10BQ060PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.6 T = 25 C J 2 A 0.76 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.57 T = 125 C J 2 A 0.69 T = 25 C 0.1 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 5.0 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 62 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of charge dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, (2) R DC operation 36 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar DO-214AA) V1H Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB 10 10 T = 150 C J T = 150 C 1 J T = 125 C J T = 125 C J T = 25 C J T = 100 C J 0.1 1 T = 75 C J 0.01 T = 50 C J 0.001 T = 25 C J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Revision: 03-Jun-14 Document Number: 94113 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R