VS-10BQ100HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak SMB (DO-214AA) of 260 C Meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS AEC-Q101 qualified I 1 A F(AV) Material categorization: for definitions of compliance V 100 V R please see www.vishay.com/doc 99912 V at I 0.59 V F F I 1 mA at 125 C RM DESCRIPTION T max. 175 C J The VS-10BQ100HM3 surface-mount Schottky rectifier ha s Diode variation Single die been designed for applications requiring low forward drop E 1.0 mJ AS and very small foot prints on PC boards. Typical Package SMB (DO-214AA) applications are in disk drives, switching power supplies, Circuit configuration Single converters, freewheeling diodes, battery charging, an d reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1 A F(AV) V 100 V RRM I t = 5 s sine 780 A FSM p V 1.0 A , T = 125 C 0.59 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10BQ100HM3UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 143 C, rectangular waveform 1.0 A F(AV) L 5 s sine or 3 s rect. pulse Following any rated 780 Maximum peak one cycle I load condition and with A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 38 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 8 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-Apr-2019 Document Number: 95725 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10BQ100HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.75 T = 25 C J 2 A 0.82 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.59 T = 125 C J 2 A 0.65 T = 25 C 0.5 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 1 J Typical junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 65 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of charge dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and (1) T , T -55 to +175 C J Stg storage temperature range Maximum thermal resistance, (2) R DC operation 36 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (DO-214AA) 1J Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 23-Apr-2019 Document Number: 95725 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000