X-On Electronics has gained recognition as a prominent supplier of STPSC10C065RY Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC10C065RY Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC10C065RY STMicroelectronics

STPSC10C065RY electronic component of STMicroelectronics
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Part No.STPSC10C065RY
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers DFD THYR TRIAC & RECTIFIER
Datasheet: STPSC10C065RY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 1.547 ea
Line Total: USD 4.64 
Availability - 383
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
383
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3
Multiples : 1
3 : USD 1.547

19
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 5.0193
10 : USD 4.4163
50 : USD 3.7348
100 : USD 3.3724
500 : USD 3.2045
1000 : USD 3.1289

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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We are delighted to provide the STPSC10C065RY from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC10C065RY and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC10C065-Y Datasheet Automotive 650 V power Schottky silicon carbide diode Features NC(1) K(2) A(3) AEC-Q101 qualified K No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications A PPAP capable K NC 2 ECOPACK 2 compliant component I PAK Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions. Product status link STPSC10C065-Y Product summary I 10 A F(AV) V 650 V RRM T (max.) 175 C j DS12402 - Rev 2 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC10C065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V T from -40 C to 175 C Repetitive peak reverse voltage 650 V RRM j I Forward rms current 22 A F(RMS) (1) I T = 120 C, DC current Average forward current 10 A F(AV) c t = 10 ms sinusoidal, T = 25 C 85 p c I t = 10 ms sinusoidal, T = 125 C Surge non repetitive forward current 75 A FSM p c t = 10 s square, T = 25 C 500 p c T Storage temperature range -55 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) 2. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. R Junction to case 1.3 2.0 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 9 100 j (1) I Reverse leakage current V = V A R RRM R T = 150 C - 85 425 j T = 25 C - 1.56 1.75 j (2) V Forward voltage drop I = 10 A V F F T = 150 C - 1.98 2.50 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.35 x I + 0.12 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) V = 400 V Q Total capacitive charge 26.4 nC Cj R V = 0 V, T = 25 C, F = 1 MHz 480 R c C Total capacitance pF j V = 300 V, T = 25 C, F = 1 MHz 47 R c 1. V R Most accurate value for the capacitive charge: Q V = C V dV c j R j 0 DS12402 - Rev 2 page 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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