X-On Electronics has gained recognition as a prominent supplier of STPSC10H12CWL Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC10H12CWL Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC10H12CWL STMicroelectronics

STPSC10H12CWL electronic component of STMicroelectronics
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Part No.STPSC10H12CWL
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide diode
Datasheet: STPSC10H12CWL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.363 ea
Line Total: USD 7.36 
Availability - 45
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
45
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 7.363
10 : USD 7.013
30 : USD 6.8002
90 : USD 6.621

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Numofpackaging
Factory Pack Quantity :
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC10H12CWL from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC10H12CWL and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC10H12C 1200 V power Schottky silicon carbide diode Datasheet - production data Description A1 The SiC diode, available in TO-247 LL, is an K ultrahigh performance power Schottky rectifier. It A2 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This A2 rectifier will enhance the performance of the K targeted application. Its high forward surge A1 TO-247 LL capability ensures a good robustness during transient phases. Table 1: Device summary Features Symbol Value No or negligible reverse recovery IF(AV) 2 x 5 A Switching behavior independent of temperature V 1200 V RRM Robust high voltage periphery Tj (max.) 175 C Operating Tj from -40 C to 175 C VF (typ.) 1.35 V ECOPACK 2 compliant February 2017 DocID030345 Rev 1 1/10 www.st.com This is information on a product in full production. Characteristics STPSC10H12C 1 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 1200 V I Forward rms current 20 A F(RMS) TC = 160 C, DC current 5/10 Average forward Per diode/per I TC = 135 C, DC current 9/18 A F(AV) device current TC = 25 C, DC current 19/38 Repetitive peak I T = 160 C, T = 175 C, = 0.1 19 A FRM C j forward current T = 25 C 35 C Surge non t = 10 ms sinusoidal p IFSM repetitive forward TC = 150 C 30 A current t = 10 s square T = 25 C 210 p C Tstg Storage temperature range -65 to +175 C T Operating junction temperature range -40 to +175 C j Table 3: Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit Per diode 1.0 1.4 Junction to case Rth(j-c) C/W Per device 0.5 0.7 Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 2.5 30 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 15 200 j Tj = 25 C - 1.35 1.50 (2) VF Forward voltage drop IF = 5 A V T = 150 C - 1.75 2.25 j Notes: (1) Pulse test: tp = 10 ms, < 2% (2) Pulse test: tp = 500 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 1.08 x I + 0.233 x I F(AV) F (RMS) 2/10 DocID030345 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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