X-On Electronics has gained recognition as a prominent supplier of STPSC40065CW Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC40065CW Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC40065CW STMicroelectronics

STPSC40065CW electronic component of STMicroelectronics
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Part No.STPSC40065CW
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: STMicroelectronics Schottky Diodes & Rectifiers
Datasheet: STPSC40065CW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.3991 ea
Line Total: USD 10.4 
Availability - 123
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 8.9739
10 : USD 7.3606

123
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 10.3991
10 : USD 7.6978
30 : USD 7.3171

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC40065CW from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC40065CW and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC40065C 650 V power Schottky silicon carbide diode Datasheet - production data A1 Description K The SiC diode is a high voltage power Schottky A2 diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. A2 Used as a freewheeling or output rectification K A1 diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter. TO-247 Table 1: Device summary Symbol Value Features IF(AV) 2 x 20 A No reverse recovery charge in application V 650 V RRM current range Switching behavior independent of Tj (max.) 175 C temperature V (typ.) 1.30 V F Dedicated to PFC applications ECOPACK 2 compliant component September 2016 DocID027965 Rev 3 1/9 www.st.com This is information on a product in full production. Characteristics STPSC40065C 1 Characteristics Table 2: Absolute ratings per diode (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V I Forward rms current 40 A F(RMS) (1) Tc = 140 C , DC, per diode 20 IF(AV) Average forward current A (1) Tc = 130 C , DC, per device 40 Repetitive peak forward I Tc =140 C, Tj = 175 C, = 0.1 87 A FRM current tp = 10 ms sinusoidal, Tc = 25 C 90 Surge non repetitive I tp = 10 ms sinusoidal, Tc = 125 C 70 A FSM forward current tp = 10 s square, Tc = 25 C 400 T Storage temperature range -55 to +175 C stg (2) Tj Operating junction temperature range -40 to +175 C Notes: (1) Value based on Rth(j-c) max. (2) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Value Unit Per diode 0.90 Rth(j-c) Junction to case Total 0.60 C/W R Coupling 0.30 th(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 30 300 j VR = VRRM (1) I R Reverse leakage current Tj = 150 C - 280 2000 A T = 25 C V = 600 V - 15 150 j R Tj = 25 C - 1.30 1.45 (2) VF Forward voltage drop T = 150 C I = 20 A - 1.45 1.65 V j F Tj = 175 C - 1.50 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: P = 1.02 x I + 0.039 x I F(AV) F (RMS) 2/9 DocID027965 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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