Product Information

1N5399 R0

1N5399 R0 electronic component of Taiwan Semiconductor

Datasheet
Diode 1KV 1.5A 2-Pin DO-15 T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0235 ea
Line Total: USD 70.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

1N5399 R0
Taiwan Semiconductor

3000 : USD 0.0235

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Peak Non-Repetitive Surge Current Max
Peak Rep Rev Volt
Rev Curr
Avg Forward Curr Max
Deleted
Peak Non-Repetitive Surge Current
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CREAT BY ART 1N5391 - 1N5399 1.5 AMPS. Silicon Rectifiers DO-15 RoRoHHSS Pb COCOMMPPLIALIANCENCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix on packing code & prefix on datecode Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free, solderable per Dimensions in inches and (millimeters) MIL-STD-202, Method 208 guaranteed Marking Diagram Polarity: Color band denotes cathode 1N539X = Specific Device Code G = Green Compound High temperature soldering guaranteed: 260 /10s /.375 , (9.5mm) lead lengths at 5 lbs, (2.3kg) tension Y = Year Weight: 0.40 grams WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% 1N 1N 1N 1N 1N 1N 1N Symbol Units Type Number 5391 5392 5393 5395 5397 5398 5399 Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1.5 A F(AV) .375 (9.5mm) Lead Length T =75 A Peak Forward Surge Current, 8.3 ms Single Half Sine- I 50 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.1 1.0 V F 1.5A Maximum DC Reverse Current at T =25 5 uA A I R Rated DC Blocking Voltage T =125 50 uA A Maximum Full Load Reverse Current, Full Cycle Average .375 (9.5mm) Lead Length I 30 uA R(AV) T =75 A Typical Junction Capacitance (Note 2) Cj 50 pF R JA 60 O Typical Thermal Resistance (Note 3) R 5 JC C/W R 12 JL O Operating Temperature Range T - 65 to + 150 J C O Storage Temperature Range T - 65 to + 150 C STG Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 3: Mount on Cu-Pad Size 10mm x 10mm on PCB Version:C10RATINGS AND CHARACTERISTIC CURVES (1N5391 THRU 1N5399) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 10 2 1.5 TA=125 1 1 RESISTIVE OR INDUCTIVE LOAD 0.5 0 0.1 0 25 50 75 100 125 150 175 o TA=25 AMBIENT TEMPERATURE ( C) 0.01 0 20 40 60 80 100 120 140 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE PERCENT OF RATED PEAK REVERSE VOLTAGE (%) CURRENT 50 40 30 20 10 0 1 10 100 FIG. 5- TYPICAL FORWARD CHARACTERISRICS NUMBER OF CYCLES AT 60 Hz 100 10 FIG. 4- TYPICAL JUNCTION CAPACITANCE 1000 1N5392-1N5399 1 100 1N5391 0.1 10 TA=25 1 0.01 0.1 1 10 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:C10 AVERAGE FORWARD PEAK FORWARD SURGE A JUNCTION CAPACITANCE (pF) RECTIFIED CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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