STPSC406 600 V power Schottky silicon carbide diode Datasheet - production data Description The SiC diode is an ultrahigh performance power K Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky A K construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal TO-220AC capacitive turn-off behavior is independent of STPSC406D temperature. ST SiC diodes will boost the performance of PFC K operations in hard switching conditions. Table 1. Device summary A I 4 A F(AV) NC V 600 V RRM DPAK T 175 C j (max) STPSC406B Q 3 nC C (typ) Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode August 2015 DocID16283 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPSC406 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 11 A F(RMS) DPAK, T = 110 C, = 0.5 c Average forward I 4 A F(AV) current TO-220AC, T = 95 C, = 0.5 c t = 10 ms sinusoidal, T = 25 C 14 p c Surge non repetitive I t = 10 ms sinusoidal, T = 125 C 10 A FSM p c forward current t = 10 s square, T = 25 C 40 p c DPAK, T = 115 C, T = 150 C, = 0.1 c j Repetitive peak forward I 14 A FRM current TO-220AC, T = 105 C, T = 150 C, = 0.1 c j T Storage temperature range -55 to +175 C stg (1) T Operating junction temperature -40 to +175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit T0-220AC 5.5 R Junction to case C/W th(j-c) DPAK 4.5 Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -10 50 j Reverse leakage (1) I V = V A R R RRM current T = 150 C - 60 500 j T = 25 C -1.55 1.9 j (2) V Forward voltage drop I = 4 A V F F T = 150 C - 1.9 2.4 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.20x I + 0.3 x I F(AV) F (RMS) 2/8 DocID16283 Rev 2