STPSC5H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide K K substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, A no recovery is shown at turn-off and ringing K patterns are negligible. The minimal capacitive A DPAK HV 2L turn-off behavior is independent of temperature. K Especially suited for use in PFC and secondary TO-220AC side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge Features capability ensures a good robustness during No or negligible reverse recovery transient phases. Switching behavior independent of temperature Table 1: Device summary Robust high voltage periphery Symbol Value Operating Tj from -40 C to 175 C IF(AV) 5 A Low V F V 1200 V ECOPACK 2 compliant RRM Tj(max.) 175 C V (typ.) 1.35 V F January 2017 DocID030272 Rev 1 1/10 www.st.com This is information on a product in full production. Characteristics STPSC5H12 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 1200 V I Forward rms current 20 A F(RMS) TC = 160 C, DC current 5 IF(AV) Average forward current A T = 125 C, DC current 10 C Repetitive peak forward A IFRM TC = 160 C, Tj = 175 C, = 0.1 19 current TC = 25 C 35 tp = 10 ms sinusoidal Surge non repetitive I T = 150 C 30 A FSM C forward current t = 10 s square T = 25 C 210 p C Tstg Storage temperature range -65 to +175 C T Operating junction temperature range -40 to +175 C j Table 3: Thermal parameters Symbol Parameter Typ. Max. Unit R Junction to case 1.0 1.4 C/W th(j-c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 2.5 30 j (1) IR Reverse leakage current VR = VRRM A Tj = 150 C - 15 200 T = 25 C - 1.35 1.50 j (2) VF Forward voltage drop I = 5 A V F Tj = 150 C - 1.75 2.25 Notes: (1) Pulse test: t = 10 ms, < 2% p (2) Pulse test: tp = 500 s, < 2% To evaluate the maximum conduction losses, use the following equation: 2 P = 1.08 x IF(AV) + 0.233 x IF (RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) QCj Total capacitive charge V = 800 V - 36 - nC R VR = 0 V, Tc = 25 C, F = 1 MHz - 450 - C Total capacitance pF j V = 800 V, T = 25 C, F = 1 MHz - 29 - R c Notes: (1) Most accurate value for the capacitive charge: ( ) = ( ) 0 2/10 DocID030272 Rev 1