STPSC606D STMicroelectronics

STPSC606 600 V power Schottky silicon carbide diode Features K No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon K carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and A NC ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of 2 temperature. D PAK STPSC606G ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1. Device summary I 6 A F(AV) V 600 V RRM T 175 C j (max) Q 6 nC C (typ) September 2009 Doc ID 16284 Rev 1 1/8 www.st.com 8Characteristics STPSC606 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 18 A F(RMS) I Average forward current T = 125 C, = 0.5 6 A F(AV) c t = 10 ms sinusoidal, T = 25 C 27 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 22 A FSM p c current t = 10 s square, T = 25 C 110 p c I Repetitive peak forward current = 0.1, T = 110 C, T = 150 C 27 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 2.8 C/W th(j-c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -15 75 j Reverse leakage (1) I V = V A R R RRM current T = 150 C - 100 750 j T = 25 C -1.4 1.7 j (2) V Forward voltage drop I = 6 A V F F T = 150 C - 1.6 2.1 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.20x I + 0.15 x I F(AV) F (RMS) Table 5. Other parameters Symbol Parameter Test conditions Typ. Unit V = 400 V, I = 6 A dI /dt = -200 A/s r F F Q Total capacitive charge 6nC c T = 150 C j V = 0 V, T = 25 C, F = 1 Mhz 375 r c C Total capacitance pF V = 400 V, T = 25 C, F = 1 Mhz 30 r c 2/8 Doc ID 16284 Rev 1