STPSC1206 600 V power Schottky silicon carbide diode Features No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode TO-220AC structure with a high voltage rating. Such diodes STPSC1206D exhibit no or negligible recovery characteristics. The recovery characteristics are independent of the temperature. Using these diodes will significantly reduce the switching power losses of the associated MOS- FET, and thus increase the efficiency of the Table 1. Device summary overall application. These diodes will then I 12 A F(AV) outperform the power factor correction circuit V 600 V RRM operating in hard switching conditions. T 175 C j (max) Q 12 nC C (typ) September 2009 Doc ID 16288 Rev 1 1/7 www.st.com 7Characteristics STPSC1206 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 30 A F(RMS) I Average forward current T = 110 C, = 0.5 12 A F(AV) c t = 10 ms sinusoidal, T = 25 C 50 p c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 125 C 40 A FSM p c t = 10 s square, T = 25 C 200 p c I Repetitive peak forward current T = 105 C, T = 150 C, = 0.1 50 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature -40 to +175 C j Table 3. Thermal resistance Symbol Parameter Maximum value Unit R Junction to case 1.75 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C - 30 150 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 200 1500 j T = 25 C -1.4 1.7 j (2) V Forward voltage drop I = 12 A V F F T = 150 C - 1.6 2.1 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.2 x I + 0.075 x I F(AV) F (RMS) Table 5. Other parameters Symbol Parameter Test conditions Typ. Unit V = 400 V, I = 12 A r F Q Total capacitive charge 12 nC c dI /dt = -200 A/s, T = 150 C F j V = 0 V, T = 25 C, F = 1 Mhz 750 r c C Total capacitance pF V = 400 V, T = 25 C, F = 1 Mhz 65 r c 2/7 Doc ID 16288 Rev 1