X-On Electronics has gained recognition as a prominent supplier of STPS660CB-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS660CB-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS660CB-TR STMicroelectronics

STPS660CB-TR electronic component of STMicroelectronics
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Part No.STPS660CB-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 2X3 Amp 60 Volt
Datasheet: STPS660CB-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.7574
10 : USD 0.6873
100 : USD 0.4435
1000 : USD 0.3548
2500 : USD 0.2999
10000 : USD 0.2894
25000 : USD 0.2777
50000 : USD 0.2731
100000 : USD 0.2673
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.3087
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS660CB-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS660CB-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS660CB Power Schottky rectifier Datasheet production data Description High voltage dual Schottky rectifier suited to switch mode power supplies and other power converters. Packaged in DPAK, this device is intended for use % 7 in medium voltage operation, and particularly, in high frequency circuits where low switching losses are required. Table 1. Device summary Symbol Value I 2 x 3 A F(AV) . 3 V 60 V RRM V (typ) 0.55 V F Features Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability Tape and reel packing ECOPACK 2 compliant component for DPAK on demand May 2017 DocID3629 Rev 4 1/6 This is information on a product in full production. www.st.com 6Characteristics STPS660CB 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 6 A F(RMS) I Average forward current, 0.5 square wave T = 115 C 3 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 50 A FSM p T Storage temperature range -65 to +150 C stg (1) T Maximum operating junction temperature 125 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Max. value Unit per diode 3.5 R Junction to case th(j-c) per device 2 C/W R coupling 0.5 th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C - - 30 A j (1) I Reverse leakage current V = 60 V R R T = 125 C - 2.5 10 mA j T = 25 C - - 0.65 j (2) V Forward voltage drop I = 3 A V F F T = 125 C - 0.55 0.59 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.49 x I + 0.035 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics (per diode) Symbol Test conditions Min. Typ. Max. Unit pF C Junction capacitance V = 0 V, F = 1 MHz, T = 25 C - 815 - R j 2/6 DocID3629 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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