STPS80H100TV STMicroelectronics

STPS80H100TV HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I 2 x 40 A F(AV) V 100 V K2 A2 RRM Tj (max) 150 C V (max) 0.65 V F K1 A1 FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CUR- RENT AND FORWARD VOLTAGE DROP AVALANCHE RATED LOW INDUCTANCE PACKAGE INSULATED PACKAGE : TM ISOTOP Insulated voltage = 2500 V (RMS) Capacitance = 45 pF DESCRIPTION High voltage dual Schottky barrier rectifier Packaged in ISOTOP, this device is intended for designed for high frequency telecom and use in medium voltage operation, and particu- computer Switched Mode Power Supplies larly, in high frequency circuitries where low and other power converters. switching losses and low noise are required. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM IF(RMS) RMS forward current 125 A I Average forward current Tc = 120C Per diode 40 A F(AV) = 0.5 Per device 80 I Surge non repetitive forward current tp = 10 ms sinusoidal 700 A FSM IRRM Repetitive peak reverse current tp = 2 s square F = 1kHz 2 A I Non repetitive peak reverse current tp = 100 s square 5 A RSM Tstg Storage temperature range - 55 to + 150 C Tj Maximum operating junction temperature * 150 C dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 * : < thermal runaway condition for a diode on its own heatsink ( - ) dTj Rth j a July 1999 - Ed: 3A 1/4STPS80H100TV THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to case Per leg 1 C/W th (j-c) Total 0.55 R 0.1 th (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * Reverse leakage current Tj = 25CV = V 20 A R R RRM Tj = 125C725mA V ** Forward voltage drop Tj = 25CI = 40 A 0.78 V F F Tj = 125CI = 40 A 0.61 0.65 F Tj = 25CI = 80 A 0.89 F Tj = 125CI = 80 A 0.7 0.74 F Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : 2 P = 0.56 x I + 0.0022 x I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current (per diode). temperature (=0.5, per diode). PF(av)(W) IF(av)(A) 35 50 = 0.2 = 0.1 = 0.5 = 0.05 45 Rth(j-a)=Rth(j-c) 30 40 25 35 = 1 30 20 Rth(j-a)=5C/W 25 15 20 T 15 T 10 10 5 5 =tp/T tp =tp/T tp IF(av) (A) Tamb(C) 0 0 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50 2/4