STPS80L60CY STMicroelectronics

STPS80L60CY POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K I 2x40A F(AV) A2 V 60 V RRM Tj (max) 150 C V (max) 0.56 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP A2 K n LOW THERMAL RESISTANCE A1 n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tap Schottky rectifier suited for CAD computers and servers. Max247 Packaged in Max247, STPS80L60CY is intended for use in low voltage, high frequency switching power supplies, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I RMS forward current 56 A F(RMS) I Average forward current Tc = 130C Per diode 40 A F(AV) = 0.5 Per device 80 I Surge non repetitive forward current tp = 10 ms sinusoidal 400 A FSM I Repetitive peak reverse current tp=2s square F = 1kHz 2 A RRM P Repetitive peak avalanche power tp = 1s Tj = 25C 20000 W ARM T Storage temperature range - 55 to + 150 C stg Tj Maximum operating junction temperature * 150 C dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 4A 1/4STPS80L60CY THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to case Per diode 0.70 C/W th (j-c) Total 0.50 R Coupling 0.3 th (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit I * Reverse leakage current Tj = 25C V =V 1.8 mA R R RRM Tj = 125C 0.4 0.9 A V * Forward voltage drop Tj = 25CI = 40 A 0.57 V F F Tj = 125C 0.50 0.56 Tj=25CI = 80 A 0.78 F Tj = 125C 0.69 0.77 Pulse test : * tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.36xI + 0.005 x I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature ( = 0.5). P(W) IF(av)(A) 35 45 = 0.5 Rth(j-a)=Rth(j-c) 40 30 = 0.2 35 = 0.1 25 30 = 0.05 = 1 20 25 Rth(j-a)=5C/W 20 15 15 10 T 10 5 5 Tamb(C) IF(av)(A) tp =tp/T 0 0 0 1020 304050 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 T (C) j t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/4