X-On Electronics has gained recognition as a prominent supplier of STPS8H100DEE-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS8H100DEE-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS8H100DEE-TR STMicroelectronics

STPS8H100DEE-TR electronic component of STMicroelectronics
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Part No.STPS8H100DEE-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers High Volt 8A IF 100V 0.68V VF PowerFLAT
Datasheet: STPS8H100DEE-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.085 ea
Line Total: USD 1.08 
Availability - 33
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
33
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.085
10 : USD 1.0607
30 : USD 1.0437
100 : USD 1.0248

378
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 26
Multiples : 1
26 : USD 1.5545
50 : USD 1.4161
100 : USD 1.2021
200 : USD 1.1234

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS8H100DEE-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS8H100DEE-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS8H100DEE High voltage power Schottky rectifier Datasheet - production data Description 1& This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC . converters. Packaged in PowerFLAT, this device is intended for use in low voltage, high frequency, inverters, free-wheeling, bypass diode and polarity protection applications. Its low profile was 1& especially designed to be used in applications with space-saving constraints. 1& Table 1. Device summary . Symbol Value . I 8 A F(AV) V 100 V RRM T (max) 175 C j 7 3RZHU)/ V (typ) 0.68 V F Features Very low conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capacity specified High junction temperature ECOPACK 2 compliant component TM: PowerFLAT is a trademark of STMicroelectronics December 2016 DocID023272 Rev 3 1/8 This is information on a product in full production. www.st.comCharacteristics STPS8H100DEE 1 Characteristics Table 2. Absolute ratings (limiting values T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 15 A F(RMS) I Average forward current, = 0.5 Tc = 150 C 8 A F(AV) I Surge non repetitive forward current t = 10 ms sinusoidal 100 A FSM p (1) P Repetitive peak avalanche power t = 10 s T = 125 C 480 W ARM j p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -4.5A Reverse leakage j (1) I V = V R R RRM current T = 125 C - 2 6 mA j T = 25 C 0.82 j I = 8 A F T = 125 C - 0.60 0.68 j T = 25 C 0.85 j (2) V Forward voltage drop I = 10 A V F F T = 125 C - 0.62 0.70 j T = 25 C 0.90 j I = 16 A F T = 125 C - 0.68 0.75 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.61 x I + 0.0088 x I F(AV) F (RMS) 2/8 DocID023272 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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