X-On Electronics has gained recognition as a prominent supplier of STPS8H100G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS8H100G Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS8H100G STMicroelectronics

STPS8H100G electronic component of STMicroelectronics
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Part No.STPS8H100G
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 8.0 Amp 100 Volt
Datasheet: STPS8H100G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 50
Multiples : 50
50 : USD 1.3879
100 : USD 1.2296
200 : USD 1.0531
400 : USD 0.8948
800 : USD 0.8035
N/A

Obsolete
0

Multiples : 2000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.4014
10 : USD 1.5845
100 : USD 1.2738
500 : USD 1.0563
1000 : USD 0.8699
N/A

Obsolete
0
MOQ : 100
Multiples : 50
100 : USD 1.1936
200 : USD 1.0222
400 : USD 0.9546
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the STPS8H100G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS8H100G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS8H100 High voltage power Schottky rectifier Datasheet - production data A K Features Negligible switching losses K K High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop A A A Insulated package: TO-220AC K NC NC TO-220FPAC, insulating voltage = 2 2000 V sine RMS D PAK Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand A Description K TO-220FPAC Schottky barrier rectifier designed for high frequency compact switched mode power supplies such as adaptors and on-board DC-DC converters. Table 1: Device summary Symbol Value IF(AV) 8 A V 100 V RRM Tj (max) 175 C V (typ) 0.56 V F December 2015 DocID5387 Rev 12 1/14 www.st.com This is information on a product in full production. Characteristics STPS8H100 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 30 A F(RMS) 2 Average forward TO-220AC, D PAK TC = 165 C IF(AV) current = 0.5, 8 A TO-220FPAC T = 150 C C square wave Surge non I repetitive forward tp = 10 ms sinusoidal 250 A FSM current Repetitive peak P tp = 10 s, T= 125 C 750 W ARM j avalanche power T Storage temperature range -65 to + 175 C stg (1) Tj Maximum operating junction temperature + 175 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameter Symbol Parameter Value Unit 2 TO-220AC, D PAK 1.6 Junction to case Rth(j-c) C/W TO-220FPAC 4 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 4.5 A (1) IR Reverse leakage current VR = VRRM T = 125 C - 2.0 6.0 mA j Tj = 25 C - 0.71 IF = 8 A T = 125 C - 0.56 0.58 j Tj = 25 C - 0.77 (2) VF Forward voltage drop IF = 10 A V T = 125 C - 0.59 0.64 j Tj = 25 C - 0.81 IF = 16 A T = 125 C - 0.65 0.68 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.48 x I + 0.0125 I F(AV) F (RMS) 2/14 DocID5387 Rev 12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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