X-On Electronics has gained recognition as a prominent supplier of STPSC10065GY-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC10065GY-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC10065GY-TR STMicroelectronics

STPSC10065GY-TR electronic component of STMicroelectronics
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Part No.STPSC10065GY-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers DFD THYR TRIAC & RECTIFIER
Datasheet: STPSC10065GY-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.807 ea
Line Total: USD 1807 
Availability - 970
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
970
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.807

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC10065GY-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC10065GY-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC10065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a K silicon carbide substrate. The wide band gap K material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and K A ringing patterns are negligible. The minimal A NC capacitive turn-off behavior is independent of K temperature. DPAK TO-220AC Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Features AEC-Q101 qualified Table 1: Device summary No or negligible reverse recovery Symbol Value Switching behavior independent of IF(AV) 10 A temperature Dedicated to PFC applications V 650 V RRM High forward surge capability Tj (max.) 175 C PPAP capable V (typ.) 1.30 V F Operating T from -40 C to 175 C j ECOPACK 2 compliant component November 2017 DocID030728 Rev 3 1/12 www.st.com This is information on a product in full production. Characteristics STPSC10065-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit Repetitive peak reverse V T from -40 C to 175 C 650 V RRM j voltage I Forward rms current 22 A F(RMS) (1) I Average forward current TC = 150 C , DC current 10 A F(AV) Repetitive peak forward I Tc = 150 C, Tj = 175 C, = 0.1 42 A FRM current t = 10 ms sinusoidal, T = 25 C 48 p c Surge non repetitive forward I tp = 10 ms sinusoidal, Tc = 125 C 39 A FSM current tp = 10 s square, Tc = 25 C 210 T Storage temperature range -65 to +175 C stg (2) Tj Operating junction temperature -40 to +175 C Notes: (1) Value based on R max. th(j-c) (2) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Value Symbol Parameter Unit Typ. Max. Rth(j-c) Junction to case 1.0 1.5 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 7 130 (1) I R Reverse leakage current VR = VRRM A T = 150 C - 53 900 j Tj = 25 C - 1.30 1.45 (2) V Forward voltage drop T = 150 C I = 10 A - 1.45 1.65 V F j F Tj = 175 C - 1.50 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.97 x IF(AV) + 0.068 x IF (RMS) 2/12 DocID030728 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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