STPSC10H065BY-TR/BKN STMicroelectronics

STPSC10H065BY-TR Datasheet Automotive 650 V power Schottky silicon carbide diode Features A K AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable ECOPACK 2 compliant component Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Product status STPSC10H065BY-TR Product summary Symbol Value I 10 A F(AV) V 650 V RRM T 175 C j(max.) DS12496 - Rev 1 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC10H065BY-TR Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage T = -40 C to + 175 C 650 V RRM j I Forward rms current 22 A F(RMS) (1) I Average forward current T = 140 C , DC 10 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 25 C 90 FSM p c 80 t = 10 ms sinusoidal, T = 125 C A p c 470 t = 10 s square, T = 25 C p c (1) I Repetitive peak forward current T = 140 C , T = 175 C, = 0.1 42 A FRM c j T Storage temperature range -55 to +175 C stg (2) T -40 to +175 C Operating junction temperature range j 1. Value based on R max. th(j-c) 2. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal parameters Symbol Parameter Typ. value Max. value Unit R Junction to case 1.25 1.5 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 9 100 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 85 425 j T = 25 C - 1.45 1.65 j (2) I = 10 A V Forward voltage drop V F F T = 150 C - 1.7 2.05 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.972 x I + 0.108 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 400 V 28.5 nC R cj V = 0 V, T = 25 C, F = 1 MHz 480 R c C Total capacitance pF j V = 400 V, T = 25 C, F = 1 MHz 48 R c V 1. OUT Most accurate value for the capacitive charge: Q = c V d c j j R VR 0 DS12496 - Rev 1 page 2/9