X-On Electronics has gained recognition as a prominent supplier of STPSC10H12DY Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC10H12DY Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC10H12DY STMicroelectronics

STPSC10H12DY electronic component of STMicroelectronics
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Part No.STPSC10H12DY
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers DFD THYR TRIAC & RECTIFIER
Datasheet: STPSC10H12DY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.8027 ea
Line Total: USD 4.8 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 4.8027
10 : USD 3.6382
100 : USD 3.5654

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 3.4029

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 9.0154
10 : USD 7.8214

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2
Multiples : 1
2 : USD 4.8027
10 : USD 3.6382
100 : USD 3.5654

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Brand
Numofpackaging
Factory Pack Quantity :
Vr - Reverse Voltage
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC10H12DY from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC10H12DY and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC10H12-Y Automotive grade 1200 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode, available in TO-220AC and DPAK, is an ultrahigh performance power K K Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at A turn-off and ringing patterns are negligible. The A NC K minimal capacitive turn-off behavior is independent of temperature. TO-220AC DPAK Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the Features targeted application. Its high forward surge AEC-Q101 qualified capability ensures a good robustness during No or negligible reverse recovery transient phases. Switching behavior independent of Table 1: Device summary temperature Symbol Value Robust high voltage periphery PPAP capable IF(AV) 10 A Operating T from -40 C to 175 C j VRRM 1200 V ECOPACK 2 compliant T(max.) 175 C j VF(typ.) 1.35 V January 2017 DocID029346 Rev 2 1/10 www.st.com This is information on a product in full production. Characteristics STPSC10H12-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 1200 V I Forward rms current 25 A F(RMS) I Average forward current TC = 155 C, DC current 10 A F(AV) Repetitive peak forward I T = 155 C, T = 175 C, = 0.1 38 A FRM C j current TC = 25 C 71 t = 10 ms sinusoidal p Surge non repetitive forward I T = 150 C 60 A FSM C current tp = 10 s square TC = 25 C 420 T Storage temperature range -65 to +175 C stg Tj Operating junction temperature range -40 to +175 C Table 3: Thermal parameters Symbol Parameter Typ. Max. Unit Rth(j-c) Junction to case 0.65 0.9 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 5 60 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 30 400 j Tj = 25 C - 1.35 1.50 (2) VF Forward voltage drop IF = 10 A V T = 150 C - 1.75 2.25 j Notes: (1) Pulse test: tp = 10 ms, < 2% (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.03 x I + 0.122 x I F(AV) F (RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) QCj Total capacitive charge VR = 800 V - 57 - nC V = 0 V, T = 25 C, F = 1 MHz - 725 - R c Cj Total capacitance pF VR = 800 V, Tc = 25 C, F = 1 MHz - 47 - Notes: (1) Most accurate value for the capacitive charge: ( ) = ( ) 0 2/10 DocID029346 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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