STPSC10H12DY STMicroelectronics

STPSC10H12-Y Automotive grade 1200 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode, available in TO-220AC and DPAK, is an ultrahigh performance power K K Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at A turn-off and ringing patterns are negligible. The A NC K minimal capacitive turn-off behavior is independent of temperature. TO-220AC DPAK Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the Features targeted application. Its high forward surge AEC-Q101 qualified capability ensures a good robustness during No or negligible reverse recovery transient phases. Switching behavior independent of Table 1: Device summary temperature Symbol Value Robust high voltage periphery PPAP capable IF(AV) 10 A Operating T from -40 C to 175 C j VRRM 1200 V ECOPACK 2 compliant T(max.) 175 C j VF(typ.) 1.35 V January 2017 DocID029346 Rev 2 1/10 www.st.com This is information on a product in full production. Characteristics STPSC10H12-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 1200 V I Forward rms current 25 A F(RMS) I Average forward current TC = 155 C, DC current 10 A F(AV) Repetitive peak forward I T = 155 C, T = 175 C, = 0.1 38 A FRM C j current TC = 25 C 71 t = 10 ms sinusoidal p Surge non repetitive forward I T = 150 C 60 A FSM C current tp = 10 s square TC = 25 C 420 T Storage temperature range -65 to +175 C stg Tj Operating junction temperature range -40 to +175 C Table 3: Thermal parameters Symbol Parameter Typ. Max. Unit Rth(j-c) Junction to case 0.65 0.9 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 5 60 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 30 400 j Tj = 25 C - 1.35 1.50 (2) VF Forward voltage drop IF = 10 A V T = 150 C - 1.75 2.25 j Notes: (1) Pulse test: tp = 10 ms, < 2% (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.03 x I + 0.122 x I F(AV) F (RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) QCj Total capacitive charge VR = 800 V - 57 - nC V = 0 V, T = 25 C, F = 1 MHz - 725 - R c Cj Total capacitance pF VR = 800 V, Tc = 25 C, F = 1 MHz - 47 - Notes: (1) Most accurate value for the capacitive charge: ( ) = ( ) 0 2/10 DocID029346 Rev 2