X-On Electronics has gained recognition as a prominent supplier of STPSC12065DY Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC12065DY Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC12065DY STMicroelectronics

STPSC12065DY electronic component of STMicroelectronics
STPSC12065DY STMicroelectronics
STPSC12065DY Schottky Diodes & Rectifiers
STPSC12065DY  Semiconductors

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See Product Specifications
Part No. STPSC12065DY
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC
Datasheet: STPSC12065DY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.4146 ea
Line Total: USD 2414.6 
Availability - 970
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
970
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ : 1000
Multiples : 1000
1000 : USD 2.4146

   
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Semiconductor Structure
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We are delighted to provide the STPSC12065DY from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC12065DY and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC12065-Y Datasheet Automotive 650 V, 12 A, silicon carbide power Schottky diode Features A K K K AEC-Q101 qualified K No or negligible reverse recovery A Switching behavior independent of temperature A NC K Dedicated to PFC applications DPAK TO-220AC High forward surge capability K PPAP capable Operating T from -40 C to 175 C j A V guaranteed from -40 to +175 C A RRM NC DPAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top DPAK HV coating) ECOPACK 2 compliant Product label Applications On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Product status link Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal STPSC12065-Y capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC12065-Y will boost Product summary performance in hard switching conditions. Its high forward surge capability ensures I 12 A F(AV) good robustness during transient phases. V 650 V RRM T (max.) 175 C j V (typ.) 1.30 V F DS11624 - Rev 4 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC12065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 650 V RRM j I Forward rms current 22 A F(RMS) (1) I T = 145 C , DC Average forward current 12 A F(AV) c (1) I Repetitive peak forward current T =145 C , T = 175 C, = 0.1 53 A FRM c j t = 10 ms sinusoidal, T = 25 C 50 p c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 125 C 40 A FSM p c t = 10 s square, T = 25 C 220 p c T Storage temperature range -55 to +175 C stg T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. R Junction to case 0.85 1.25 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 15 150 j V = V R RRM (1) T = 150 C I Reverse leakage current - 200 1000 A R j T = 25 C V = 600 V 8 50 j R T = 25 C - 1.30 1.45 j (2) V T = 150 C I = 12 A Forward voltage drop - 1.45 1.65 V F j F T = 175 C - 1.50 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.02 x I + 0.065 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) Q Total capacitive charge V = 400 V - 36 - nC R Cj DS11624 - Rev 4 page 2/15

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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