STPSC12065-Y Datasheet Automotive 650 V, 12 A, silicon carbide power Schottky diode Features A K K K AEC-Q101 qualified K No or negligible reverse recovery A Switching behavior independent of temperature A NC K Dedicated to PFC applications DPAK TO-220AC High forward surge capability K PPAP capable Operating T from -40 C to 175 C j A V guaranteed from -40 to +175 C A RRM NC DPAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top DPAK HV coating) ECOPACK 2 compliant Product label Applications On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Product status link Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal STPSC12065-Y capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC12065-Y will boost Product summary performance in hard switching conditions. Its high forward surge capability ensures I 12 A F(AV) good robustness during transient phases. V 650 V RRM T (max.) 175 C j V (typ.) 1.30 V F DS11624 - Rev 4 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC12065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 650 V RRM j I Forward rms current 22 A F(RMS) (1) I T = 145 C , DC Average forward current 12 A F(AV) c (1) I Repetitive peak forward current T =145 C , T = 175 C, = 0.1 53 A FRM c j t = 10 ms sinusoidal, T = 25 C 50 p c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 125 C 40 A FSM p c t = 10 s square, T = 25 C 220 p c T Storage temperature range -55 to +175 C stg T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. R Junction to case 0.85 1.25 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 15 150 j V = V R RRM (1) T = 150 C I Reverse leakage current - 200 1000 A R j T = 25 C V = 600 V 8 50 j R T = 25 C - 1.30 1.45 j (2) V T = 150 C I = 12 A Forward voltage drop - 1.45 1.65 V F j F T = 175 C - 1.50 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.02 x I + 0.065 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) Q Total capacitive charge V = 400 V - 36 - nC R Cj DS11624 - Rev 4 page 2/15