STPSC20H12CWY Datasheet 20 A 1200 V power Schottky silicon carbide diode Features AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Robust high-voltage periphery PPAP capable Operating T from -40 C to 175 C j ECOPACK2 compliant Applications OBC (On Board Battery chargers) PHEV - EV charging stations Resonant LLC topology PFC functions (Power Factor Corrector) Description The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low V Schottky diode structure with a 1200 V rating. F Product status link Due to the Schottky construction, no recovery is shown at turn-off and ringing STPSC20H12CWY patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product summary Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the I 2 x 10 A F(AV) performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. V 1200 V RRM T (max.) 175 C j V (typ.) 1.35 V F Product label DS12793 - Rev 2 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STPSC20H12CWY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C , unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 1200 V RRM j I Forward rms current 25 A F(RMS) Per diode 10 I T = 150 C, DC current Average forward current A F(AV) c Per device 20 I T =150 C, T = 175 C, = 0.1 Repetitive peak forward current 42 A FRM c j t = 10 ms sinusoidal T = 25 C 71 p c I t = 10 ms sinusoidal T = 150 C Surge non repetitive forward current 60 A FSM p c t = 10 s square T = 25 C 420 p c T Storage temperature range -55 to +175 C stg (1) T -40 to +175 C j Operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Typ. Max. Unit Per diode 0.70 0.95 R Junction to case C/W th(j-c) Per device 0.35 0.48 For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 5 60 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 30 400 j T = 25 C - 1.35 1.50 j (2) V Forward voltage drop I = 10 A V F F T = 150 C - 1.75 2.25 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.03 x I + 0.122 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS12793 - Rev 2 page 2/10