STPSC30H12CWL STMicroelectronics

STPSC30H12C 1200 V power Schottky silicon carbide diode Datasheet - production data Description A1 The SiC diode, available in TO-247 LL, is an K ultrahigh performance power Schottky rectifier. It A2 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This A2 rectifier will enhance the performance of the K targeted application. Its high forward surge A1 TO-247 LL capability ensures a good robustness during transient phases. Table 1: Device summary Features Symbol Value No or negligible reverse recovery IF(AV) 2 x 15 A Switching behavior independent of temperature V 1200 V RRM Robust high voltage periphery Tj (max.) 175 C Operating Tj from -40 C to 175 C V (typ.) 1.35 V F ECOPACK 2 compliant February 2017 DocID030339 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics STPSC30H12C 1 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 1200 V I Forward rms current 38 A F(RMS) TC = 150 C 15/30 DC current T = 135 C C Per diode/per device IF(AV) Average forward current 21/42 A DC current T = 25 C C 38/76 DC current Repetitive peak forward I T = 150 C,T = 175 C, = 0.1 61 A FRM C j current TC = 25 C 105 tp = 10 ms sinusoidal Surge non repetitive TC = 150 C 90 IFSM A forward current t = 10 s p TC = 25 C 630 square Tstg Storage temperature range -65 to +175 C T Operating junction temperature range -40 to +175 C j Table 3: Thermal resistance parameters Typ. Max. Symbol Parameter Unit value value Per diode 0.50 0.70 Junction to case Rth(j-c) C/W Per device 0.25 0.35 Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 7.5 90 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 45 600 j Tj = 25 C - 1.35 1.50 (2) V F Forward voltage drop IF = 15 A V T = 150 C - 1.75 2.25 j Notes: (1) Pulse test: tp = 10 ms, < 2% (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.09 x I + 0.0775 x I F(AV) F (RMS) 2/9 DocID030339 Rev 1