DATA SHEET www.onsemi.com Very Low Forward Voltage TRENCH SCHOTTKY RECTIFIER Trench-based Schottky 2.0 AMPERES Rectifier 60 VOLTS NRVTS2H60ESF, NRVTSM260EV2 Features SOD123FL POWERMITE Fine Lithography Trenchbased Schottky Technology for Very Low CASE 498 CASE 457 Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability MARKING DIAGRAMs Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance M 2H6M 12 2H6 High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 2H6 = Specific Device Code M = Date Code Qualified and PPAP Capable = PbFree Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Note: Microdot may be in either location) Compliant Mechanical Characteristics: ORDERING INFORMATION Case: Molded Epoxy Epoxy Meets UL 94 V0 0.125 in Device Package Shipping Weight: 11.7 mg (Approximately) NRVTS2H60ESFT1G SOD123FL 3,000 / (PbFree) Tape & Reel Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds NRVTS2H60ESFT3G SOD123FL 10,000 / (PbFree) Tape & Reel MSL 1 NRVTSM260EV2T1G Powermite 3,000 / Typical Applications (PbFree) Tape & Reel Switching Power Supplies including Compact Adapters and Flat NRVTSM260EV2T3G Powermite 12,000 / Panel Display (PbFree) Tape & Reel High Frequency and DCDC Converters For information on tape and reel specifications, Freewheeling and ORing diodes including part orientation and tape sizes, please Reverse Battery Protection refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Instrumentation Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2021 Rev. 3 NRVTS2H60ESF/DNRVTS2H60ESF, NRVTSM260EV2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 2.0 A O (T = 125C) L Peak Repetitive Forward Current I 4.0 A FRM (Square Wave, 20 kHz, T = 139C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +175 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit SOD123FL Thermal Resistance, JunctiontoLead (Note 2) 24.4 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 85 C/W JA Thermal Resistance, JunctiontoAmbient (Note 3) R 330 C/W JA POWERMITE Thermal Resistance, JunctiontoLead (Note 2) 8.6 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 80 C/W JA Thermal Resistance, JunctiontoAmbient (Note 3) R 237 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.55 (I = 1.0 A, T = 25C) F J 0.65 (I = 2.0 A, T = 25C) F J 0.47 (I = 1.0 A, T = 125C) F J 0.58 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 12 A J (Rated dc Voltage, T = 125C) 3 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%. www.onsemi.com 2