NRVTS8120EMFS Very Low Leakage Trench-based Schottky Rectifier Features www.onsemi.com Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage TRENCH SCHOTTKY Fast Switching with Exceptional Temperature Stability RECTIFIERS Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance 8 AMPERES Low Thermal Resistance 120 VOLTS High Surge Capability NRV Prefix for Automotive and Other Applications Requiring 1,2,3 5,6 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable MARKING These Devices are PbFree, Halogen Free/BFR Free and are RoHS DIAGRAM Compliant A C 1 Typical Applications A TE0812 SO8 FLAT LEAD Switching Power Supplies including Notebook / Netbook Adapters, AYWWZZ CASE 488AA A STYLE 2 ATX and Flat Panel Display C Not Used High Frequency and DCDC Converters TE0812 = Specific Device Code Freewheeling and ORing Diodes A = Assembly Location Reverse Battery Protection Y = Year W = Work Week LED Lighting ZZ = Lot Traceability Instrumentation Mechanical Characteristics: Case: Epoxy, Molded ORDERING INFORMATION Epoxy Meets Flammability Rating UL 940 0.125 in. Device Package Shipping Lead Finish: 100% Matte Sn (Tin) NRVTS8120EMFST1G SO8 FL 1500 / Lead and Mounting Surface Temperature for Soldering Purposes: (PbFree) Tape & Reel 260C Max. for 10 Seconds NRVTS8120EMFST3G SO8 FL 5000 / Device Meets MSL 1 Requirements (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 0 NRVTS8120EMFS/DNRVTS8120EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 120 R Average Rectified Forward Current I 8.0 A F(AV) (Rated V , T = 163C) R C Peak Repetitive Forward Current, I 16 A FRM (Rated V , Square Wave, 20 kHz, T = 161C) R C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoLead, Steady State R 2.7 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) V V F (I = 4 A, T = 25C) 0.648 F J (I = 8 A, T = 25C) 0.826 0.88 F J (I = 4 A, T = 125C) 0.542 F J (I = 8 A, T = 125C) 0.613 0.65 F J Instantaneous Reverse Current (Note 1) I R (V = 90 V, T = 25C) 1.3 A R J (Rated dc Voltage, T = 25C) 3.70 50 A J (V = 90 V, T = 125C) 1.4 mA R J (Rated dc Voltage, T = 125C) 2.4 10 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2