NTS1260MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage SCHOTTKY BARRIER Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature RECTIFIERS Higher Efficiency for Achieving Regulatory Compliance 12 AMPERES Low Thermal Resistance 60 VOLTS High Surge Capability These are PbFree and HalideFree Devices 1,2,3 5,6 Typical Applications Switching Power Supplies including Wireless, Smartphone and MARKING DIAGRAM Notebook Adapters A High Frequency and DCDC Converters C 1 A Freewheeling and ORing diodes TH1260 AYWWZZ SO8 FLAT LEAD A Reverse Battery Protection CASE 488AA C Not Used Instrumentation STYLE 2 TH1260 = Specific Device Code Mechanical Characteristics: A = Assembly Location Case: Epoxy, Molded Y = Year Epoxy Meets Flammability Rating UL 940 0.125 in. W = Work Week ZZ = Lot Traceability Lead Finish: 100% Matte Sn (Tin) Lead and Mounting SurfaceTemperature for Soldering Purposes: 260C Max. for 10 Seconds ORDERING INFORMATION Device Meets MSL 1 Requirements Device Package Shipping NTS1260MFST1G SO8 FL 1500 / (PbFree) Tape & Reel NTS1260MFST3G SO8 FL 5000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 0 NTS1260MFS/DNTS1260MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 60 R Average Rectified Forward Current I 12 A F(AV) (Rated V , T = 137C) R C Peak Repetitive Forward Current, I 24 A FRM (Rated V , Square Wave, 20 kHz, T = 134C) R C NonRepetitive Peak Surge Current I 210 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 200 mJ AS ESD Rating (Human Body Model) 2 ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) v V F (i = 6.0 Amps, T = 25C) 0.46 F J (i = 12 Amps, T = 25C) 0.53 0.60 F J (i = 6.0 Amps, T = 125C) 0.39 F J (i = 12 Amps, T = 125C) 0.48 0.58 F J Instantaneous Reverse Current (Note 1) i R (Rated dc Voltage, T = 25C) 90 A J (Rated dc Voltage, T = 125C) 15 20 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2