Silicon Carbide Schottky Diode 650 V, 8 A FFSD0865B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and 1, 2, 4. Cathode 3. Anode reduced system size and cost. Features Schottky Diode Max Junction Temperature 175C Avalanche Rated 33 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS DPAK3 (TO252, 3 LD) CASE 369AS Compliant Applications General Purpose MARKING DIAGRAM SMPS, Solar Inverter, UPS Power Switching Circuits MAXIMUM RATINGS (T = 25C unless otherwise noted) Y&Z&3&K J FFS Parameter Symbol Value Unit D0865B Peak Repetitive Reverse Voltage V 650 V RRM Single Pulse Avalanche Energy (T = 25C, E 33 mJ J AS I = 11.5 A, L = 0.5 mH, V = 50 V) L(pk) Continuous Rectified Forward T < 153 I 8.0 A C F Y = ON Semiconductor Logo Current &Z = Assembly Plant Code T < 135 11.6 C &3 = Numeric Date Code NonRepetitive Peak Forward T = 25C, I 577 A C FM &K = Lot Code Surge Current t = 10 s P FFSD0865B = Specific Device Code T = 150C, 538 C t = 10 s P ORDERING INFORMATION NonRepetitive Forward Surge T = 25C I 42 A C FSM See detailed ordering and shipping information on page 2 of Current (HalfSine Pulse) t = 8.3 ms P this data sheet. Power Dissipation P W T = 25C 91 C tot T = 150C 15 C Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2020 Rev. 2 FFSD0865B/DFFSD0865B THERMAL RESISTANCE Parameter Symbol Value Unit Thermal Resistance, JunctiontoCase R 1.64 C/W JC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit ON CHARACTERISTICS V Forward Voltage I = 8.0 A, T = 25C 1.39 1.7 V F F J I = 8.0 A, T = 125C 1.55 2.0 F J I = 8.0 A, T = 175C 1.71 2.4 F J I Reverse Current V = 650 V, T = 25C 0.5 40 A R R J V = 650 V, T = 125C 1.0 80 R J V = 650 V, T = 175C 2.0 160 R J CHARGES, CAPACITANCES & GATE RESISTANCE Q Total Capacitive Charge V = 400 V 22 nC C C C V = 1 V, f = 100 kHz 336 pF tot R V = 200 V, f = 100 kHz 39 R V = 400 V, f = 100 kHz 30 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSD0865B FFSD0865B DPAK3 Tape & Reel 330 mm 16 mm 2500 units For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2