Silicon Carbide Schottky Diode 1200 V, 10 A FFSH10120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new www.onsemi.com technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1. Cathode 2. Anode faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Schottky Diode Features Max Junction Temperature 175C Avalanche Rated 100 mJ High Surge Current Capacity 1 Positive Temperature Coefficient 2 Ease of Paralleling TO2472LD No Reverse Recovery/No Forward Recovery CASE 340CL These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSH 10120A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH10120A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2020 Rev. 1 FFSH10120A/DFFSH10120A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 1200 V RRM E Single Pulse Avalanche Energy (Note 1) 100 mJ AS I Continuous Rectified Forward Current T < 158C 10 A F C Continuous Rectified Forward Current T < 135C 17 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 850 A F, Max C 800 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 90 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 35 A F,RM p Ptot Power Dissipation T = 25C 193 W C T = 150C 32 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 100 mJ is based on starting T = 25C, L = 0.5 mH, I = 20 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.78 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 10 A, T = 25C 1.45 1.75 V F F C I = 10 A, T = 125C 1.7 2.0 F C I = 10 A, T = 175C 2.0 2.4 F C I Reverse Current V = 1200 V, T = 25C 200 A R R C V = 1200 V, T = 125C 300 R C V = 1200 V, T = 175C 400 R C Q Total Capacitive Charge V = 800 V 62 nC C C Total Capacitance V = 1 V, f = 100 kHz 612 pF R V = 400 V, f = 100 kHz 58 R V = 800 V, f = 100 kHz 47 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH10120A FFSH10120A TO2472LD 30 Units / Tube (Pb-Free / Halogen Free) www.onsemi.com 2