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This literature is subject to all applicable copyright laws and is not for resale in any manner.FFSH15120ADN F155 Silicon Carbide Schottky Diode October 2016 FFSH15120ADN F155 Silicon Carbide Schottky Diode 1200 V, 15 A Features Max Junction Temperature 175 C Description Avalanche Rated 80 mJ Silicon Carbide (SiC) Schottky Diodes use a completely new High Surge Current Capacity technology that provides superior switching performance and Positive Temperature Coefficient higher reliability compared to Silicon. No reverse recovery Ease of Paralleling current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next No Reverse Recovery / No Forward Recovery generation of power semiconductor. System benefits include Applications highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits TO-247 1 2 Long Lead 3 Absolute Maximum Ratings T = 25 C unless otherwise noted. (per leg) C Symbol Parameter FFSH15120ADN F155 Unit V Peak Repetitive Reverse Voltage 1200 V RRM E Single Pulse Avalanche Energy (Note 1) 80 mJ AS I Continuous Rectified Forward Current TC < 148 C 8* / 15** A F T = 25 C, 10 s 560 A Non-Repetitive Peak Forward Surge Cur- C I F, Max rent T = 150 C, 10 s 500 A C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 80 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 36 A F,RM p T = 25 C 110 W C Ptot Power Dissipation T = 150 C 19 W C T , T Operating and Storage Temperature Range -55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Thermal Characteristic Symbol Parameter FFSH15120ADN F155 Unit R Thermal Resistance, Junction to Case, Max 1.35* / 0.56** C/W JC * Per leg, ** Per Device Semiconductor Components Industries, LLC, 2016 1 www.onsemi.com FFSH15120ADN F155 Rev.1.2