Silicon Carbide Schottky Diode 650 V, 20 A FFSH2065ADN-F155 Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charactristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1. Anode 2. Cathode/ 3. Anode faster operating frequency, increased power density, reduced EMI, and Case reduced system size and cost. Schottky Diode Features Max Junction Temperature 175C Avalanche Rated 64 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling 1 2 No Reverse Recovery/No Forward Recovery 3 This Device is PbFree, Halogen Free/BFR Free and RoHS TO2473LD CASE 340CH Compliant Applications MARKING DIAGRAM General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSH 2065ADN Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH2065ADN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2019 Rev. 2 FFSH2065ADNF155/DFFSH2065ADN F155 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 64 mJ AS I Continuous Rectified Forward Current T < 148C 10*/20** A F C Continuous Rectified Forward Current T < 135C 13*/26** C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 620 A F, Max C 580 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 56 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 38 A F,RM p Ptot Power Dissipation T = 25C 93 W C T = 150C 16 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 64 mJ is based on starting T = 25C, L = 0.5 mH, I = 16 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 1.61*/0.7** C/W JC NOTE: * Per Leg, ** Per Device ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 10 A, T = 25C 1.5 1.75 V F F C I = 10 A, T = 125C 1.6 2.0 F C I = 10 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 34 nC C C Total Capacitance pF V = 1 V, f = 100 kHz 575 R V = 200 V, f = 100 kHz 62 R V = 400 V, f = 100 kHz 47 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH2065ADNF155 FFSH2065ADN TO2473LD 30 Units www.onsemi.com 2