FFSH3065B-F085 Silicon Carbide Schottky Diode, 650 V, 30 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1 2 Cathode Anode Features Max Junction Temperature 175C Schottky Diode Avalanche Rated 144 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AECQ101 Qualified These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant TO2472LD Applications CASE 340CL Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters MARKING DIAGRAM Y&Z&3&K FFSH 3065B Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH3065B = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2018 Rev. 3 FFSH3065BF085/DFFSH3065B F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 144 mJ AS I Continuous Rectified Forward Current T < 146C 30 A F C Continuous Rectified Forward Current T < 135C 37 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 1100 A F, Max C 1000 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 110 A F,SM p T = 25C C Ptot Power Dissipation T = 25C 268 W C T = 150C 45 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 144 mJ is based on starting T = 25C, L = 0.5 mH, I = 24 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit Thermal Resistance, Junction to Case, Max 0.56 C/W R JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 30 A, T = 25C 1.38 1.7 V F F C I = 30 A, T = 125C 1.6 2.0 F C I = 30 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 0.5 40 A R R C V = 650 V, T = 125C 1 80 R C V = 650 V, T = 175C 2 160 R C Q Total Capacitive Charge V = 400 V 73 nC C C Total Capacitance V = 1 V, f = 100 kHz 1260 pF R V = 300 V, f = 100 kHz 115 R V = 600 V, f = 100 kHz 104 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH3065BF085 FFSH3065B TO2472LD 30 Units / Tube (PbFree / Halogen Free) www.onsemi.com 2