Silicon Carbide Schottky Diode 650 V, 50 A FFSH5065A-F155 Description Silicon Carbide (SiC) Schottky Diodes use a completely new www.onsemi.com technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 2. Cathode 3. Anode faster operating frequency, increased power density, reduced EMI, and 1. No Connection reduced system size & cost. Schottky Diode Features Max Junction Temperature 175C Avalanche Rated 240 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling 1 No Reverse Recovery/No Forward Recovery 2 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS TO247 Compliant LONG LEAD CASE 340CX Applications General Purpose SMPS, Solar Inverter, UPS MARKING DIAGRAM Power Switching Circuits Y&Z&3&K FFSH 5065AF155 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH5065AF155 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2020 Rev. 2 FFSH5065AF155/DFFSH5065A F155 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 240 mJ AS I Continuous Rectified Forward Current T < 144C 50 A F C Continuous Rectified Forward Current T < 135C 60 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 1183 A F, Max C 1127 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 200 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 120 A F,RM p Ptot Power Dissipation T = 25C 429 W C T = 150C 72 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 240 mJ is based on starting T = 25C, L = 0.5 mH, I = 31 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, JunctiontoCase, Max. (Note 1) 0.35 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 50 A, T = 25C 1.51 1.75 V F F C I = 50 A, T = 125C 1.67 2.0 F C I = 50 A, T = 175C 1.82 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 147 nC C C Total Capacitance V = 1 V, f = 100 kHz 2530 pF R V = 200 V, f = 100 kHz 271 R V = 400 V, f = 100 kHz 211 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSH5065AF155 FFSH5065AF155 TO247 Tube 30 Units www.onsemi.com 2