FFSP0865B Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, www.onsemi.com temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, V I RRM F faster operating frequency, increased power density, reduced EMI, and 650 V 8.0 A reduced system size and cost. Features Max Junction Temperature 175C Avalanche Rated 33 mJ High Surge Current Capacity 1., 3. Cathode 2. Anode Positive Temperature Coefficient Schottky Diode Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits MAXIMUM RATINGS (T = 25C unless otherwise noted) J TO2202LD CASE 340BB Parameter Symbol Value Unit Peak Repetitive Reverse Voltage V 650 V RRM Single Pulse Avalanche Energy (T = 25C, E 33 mJ MARKING DIAGRAM J AS I = 11.5 A, L = 0.5 mH, V = 50 V) L(pk) Continuous Rectified Forward T < 147 I 8.0 A C F Current T < 135 10.1 C NonRepetitive Peak Forward T = 25C I 551 A FM C Surge Current t = 10 s P Y&Z&3&K T = 150C 498 C FFSP t = 10 s P 0865B NonRepetitive Forward Surge T = 25C I 56 A C FSM Current (HalfSine Pulse) t = 8.3 ms P Power Dissipation T = 25C P 73 W C tot Y = ON Semiconductor Logo T = 150C 12 C &Z = Assembly Plant Code Operating Junction and Storage Temperature T , T 55 to C &3 = Numeric Date Code J stg Range +175 &K = Lot Code FFSP0865B = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ORDERING INFORMATION See detailed ordering and shipping information on page 2 of Parameter Symbol Value Unit this data sheet. Thermal Resistance, JunctiontoCase, Max. R 2.05 C/W JC Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2019 Rev. 1 FFSP0865B/DFFSP0865B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit ON CHARACTERISTICS Forward Voltage V I = 8.0 A, T = 25C 1.39 1.7 V F F J I = 8.0 A, T = 125C 1.55 2.0 F J I = 8.0 A, T = 175C 1.71 2.4 F J Reverse Current I V = 650 V, T = 25C 0.073 40 A R R J V = 650 V, T = 125C 0.24 80 R J V = 650 V, T = 175C 0.48 160 R J CHARGES, CAPACITANCES & GATE RESISTANCE Total Capacitive Charge Q V = 400 V 22 nC C C C V = 1 V, f = 100 kHz 336 pF tot R V = 200 V, f = 100 kHz 39 R V = 400 V, f = 100 kHz 30 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSP0865B FFSP0865B TO220 Tube N/A N/A 50 Units For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2