FFSP1065B Silicon Carbide Schottky Diode 650 V, 10 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent ELECTRICAL CONNECTION thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175C 1. Cathode 2. Anode Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Applications TO2202LD CASE 340BB General Purpose SMPS, Solar Inverter, UPS Power Switching Circuit MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 49 mJ AS Y&Z&3&K FFSP I Continuous Rectified Forward Current 10 A F 1065B T < 139C C Continuous Rectified Forward Current 11 T < 135C C I NonRepetitive T = 25C, 10 s 650 A F, Max C Y = ON Semiconductor Logo Peak Forward T = 150C, 10 s 570 &Z = Assembly Plant Code Surge Current C &3 = Numeric Date Code I NonRepetitive HalfSine Pulse, 45 A F, SM &K = Lot Code Forward t = 8.3 ms p FFSP1065B = Specific Device Code Surge Current P Power Dissipation T = 25C 75 W tot C T = 150C 12.5 C ORDERING INFORMATION T , T Operating and Storage Temperature 55 to +175 J STG See detailed ordering and shipping information in the package C Range dimensions section on page 2 of this data sheet. 1. E of 49 mJ is based on starting T = 25C, L = 0.5 mH, I = 14 A, V = 50 V. AS J AS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2019 Rev. 0 FFSP1065B/DFFSP1065B THERMAL CHARACTERISTICS Symbol Parameter Unit Ratings C/W R Thermal Resistance, Junction to Case, Max. 2.0 JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP1065B TO220 Tube N/A N/A 50 Units FFSP1065B ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit V Forward Voltage I = 10 A, T = 25C 1.38 1.7 V F F C I = 10 A, T = 125C 1.6 2.0 F C I = 10 A, T = 175C 1.72 2.4 F C I Reverse Current A V = 650 V, T = 25C 0.5 40 R R C V = 650 V, T = 125C 1.0 80 R C V = 650 V, T = 175C 2.0 160 R C Q Total Capacitive Charge V = 400 V 25 nC C C Total Capacitance V = 1 V, f = 100 kHz 421 pF R V = 200 V, f = 100 kHz 46 R V = 400 V, f = 100 kHz 35 R www.onsemi.com 2