FFSP3065B Silicon Carbide Schottky Diode 650 V, 30 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent ELECTRICAL CONNECTION thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175C 1. Cathode 2. Anode Avalanche Rated 144 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Applications TO2202LD CASE 340BB General Purpose SMPS, Solar Inverter, UPS Power Switching Circuit MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 144 mJ AS Y&Z&3&K FFSP Continuous Rectified Forward Current 30 3065B T < 135C C I NonRepetitive T = 25C, 10 s 1100 A F, Max C Peak Forward T = 150C, 10 s 1000 Surge Current C I NonRepetitive HalfSine Pulse, 110 A Y = ON Semiconductor Logo F, SM Forward t = 8.3 ms &Z = Assembly Plant Code p Surge Current &3 = Numeric Date Code &K = Lot Code P Power Dissipation T = 25C 197 W tot C FFSP3065B = Specific Device Code T = 150C 33 C T , T Operating and Storage Temperature 55 to +175 J STG C Range ORDERING INFORMATION 1. E of 144 mJ is based on starting T = 25C, L = 0.5 mH, I = 24 A, V = 50 V. AS J AS See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2019 Rev. 0 FFSP3065B/DFFSP3065B THERMAL CHARACTERISTICS Symbol Parameter Unit Ratings C/W R Thermal Resistance, Junction to Case, Max. 0.76 JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP3065B TO220 Tube N/A N/A 50 Units FFSP3065B ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit V Forward Voltage I = 30 A, T = 25C 1.38 1.7 V F F C I = 30 A, T = 125C 1.6 2.0 F C I = 30 A, T = 175C 1.72 2.4 F C I Reverse Current A V = 650 V, T = 25C 0.5 40 R R C V = 650 V, T = 125C 1.0 80 R C V = 650 V, T = 175C 2.0 160 R C Q Total Capacitive Charge V = 400 V 74 nC C C Total Capacitance V = 1 V, f = 100 kHz 1280 pF R V = 200 V, f = 100 kHz 139 R V = 400 V, f = 100 kHz 108 R www.onsemi.com 2