FFSPF1065A Silicon Carbide Schottky Diode 650 V, 10 A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, V I RRM F temperature independent switching characteristics, and excellent 650 V 10 A thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175C 2. Anode 1. Cathode Avalanche Rated 64 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery 1. Cathode This Device is PbFree and is RoHS Compliant 1 2. Anode 2 Applications TO220F2L CASE 221AS General Purpose SMPS, Solar Inverter, UPS MARKING DIAGRAM Power Switching Circuits Y&Z&3&K FFSP F1065A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSPF1065A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2019 Rev. 1 FFSPF1065A/DFFSPF1065A ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter FFSPF1065A Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 64 mJ AS I Continuous Rectified Forward Current A TC < 110C 10 F TC < 135C 7.2 I NonRepetitive Peak Forward Surge Current TC = 25C, 10 s 720 A F, Max TC = 150C, 10 s 680 A I NonRepetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 56 A F, SM P I Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 28 A F, RM P P Power Dissipation TC = 25C 38 W tot TC = 150C 6.4 W T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 64 mJ is based on starting T = 25C, L = 0.5 mH, I = 16 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case, Max. 3.9 C/W JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSPF1065A FFSPF1065A TO220F2L Tube N/A N/A 50 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Forward Voltage IF = 10 A, TC = 25C 1.50 1.75 V F IF = 10 A, TC = 125C 1.60 2.0 IF = 10 A, TC = 175C 1.72 2.4 I Reverse Current VR = 650 V, TC = 25C 200 A R VR = 650 V, TC = 125C 400 VR = 650 V, TC = 175C 600 Q Total Capacitance Charge V = 400 V 34 nC C C Total Capacitance VR = 1 V, f = 100 kHz 575 pF VR = 200 V, f = 100 kHz 62 VR = 400 V, f = 100 kHz 47 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2